HETEROJUNCTION INALAS/INP MESFETS GROWN BY OMVPE

被引：17
作者：
FATHIMULLA, MA
LOUGHRAN, T
STECKER, L
HEMPFLING, E
MATTINGLY, M
AINA, O
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期
关键词：
D O I：
10.1109/55.697
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：223 / 225
页数：3
相关论文
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