DENSITY OF STATES IN METAL-SEMICONDUCTOR TUNNELING

被引：43

作者：

MAHAN, GD

CONLEY, JW

机构：

来源：

关键词：

D O I：

10.1063/1.1754947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：29 / &

共 12 条

[1]

CONLEY JJ, TO BE PUBLISHED

[2] ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].

CONLEY, JW ;

DUKE, CB ;

MAHAN, GD ;

TIEMANN, JJ .

PHYSICAL REVIEW, 1966, 150 (02) :466-&

[3]

CONLEY JW, 1967, B AM PHYS SOC, V12, P574

[4]

FLUGGE S, 1956, HANDBUCH PHYSIK ED, V18, P155

[5]

FRANZ W, 1956, HDB PHYSIK, V17, P155

[6]

FRAY SJ, 1961, P PHYS SOC LOND, V77, P213

[7] BAND STRUCTURE PARAMETERS DEDUCED FROM TUNNELING EXPERIMENTS [J].

HALL, RN ;

RACETTE, JH .

[8] TUNNELING FROM AN INDEPENDENT-PARTICLE POINT OF VIEW [J].

HARRISON, WA .

PHYSICAL REVIEW, 1961, 123 (01) :85-&

[9] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

[10]

LEWICKI G, PHYS REV LETTERS, P939