QUANTUM INTERFERENCE EFFECTS IN GAAS GAALAS BULK POTENTIAL BARRIERS

被引：24

作者：

HAYES, JR

ENGLAND, P

HARBISON, JP

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 19期

关键词：

D O I：

10.1063/1.99086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1578 / 1580

页数：3

共 9 条

[1]

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[5]

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HAYES, JR ;

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WIEGMANN, W .

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[8] TUNNELING IN THIN MOS STRUCTURES [J].

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[9] MAJORITY-CARRIER CAMEL DIODE [J].

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