TOTAL DOSE EFFECTS ON SURFACE-STATE DENSITY, CARRIER CONCENTRATION AND MOBILITY IN MOS LAYERS

被引：5
作者：
WHITEFIELD, JE
SOUTHWARD, HD
MAIER, RJ
机构：
[1] UNIV NEW MEXICO,DEPT ELECT ENGN & COMP SCI,ALBUQUERQUE,NM 87131
[2] USAF,WEAP LAB,ALBUQUERQUE,NM 87117
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期
关键词：
D O I：
10.1109/TNS.1976.4328537
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1549 / 1553
页数：5
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