INELASTIC LIGHT-SCATTERING STUDIES OF CHEMICAL VAPOR-DEPOSITION SYSTEMS

被引：42

作者：

SMITH, JE ^{[1
]}

SEDGWICK, TO ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

THIN SOLID FILMS | 1977年 / 40卷 / JAN期

关键词：

D O I：

10.1016/0040-6090(77)90098-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1 / 11

页数：11

共 22 条

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BAN, VS ;

GILBERT, SL .

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[3] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .2. DEPOSITION FROM SICL3H AND SICL4 [J].

BAN, VS .

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[4] MASS SPECTROMETRIC STUDIES OF VAPOR-PHASE CRYSTAL GROWTH .2. GAN [J].

BAN, VS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :761-&

[5] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1) [J].

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[6]

BAN VS, 1974, MAY EL SOC M SAN FRA

[7]

BRECHER LE, 1973, 4TH P INT C CHEM VAP, P340

[8] KINETICS OF CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J].

BRYANT, WA ;

MEIER, GH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) :559-565

[9]

COCHET G, 1975, 5TH P INT C CVD, P43

[10]

EVERSTEIJN FC, 1971, PHILIPS RES REP, V26, P134

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