QUANTITATIVE-DETERMINATION OF HEXAGONAL MINORITY PHASE IN CUBIC GAN USING RAMAN-SPECTROSCOPY

被引：150

作者：

SIEGLE, H

ECKEY, L

HOFFMANN, A

THOMSEN, C

MEYER, BK

SCHIKORA, D

HANKELN, M

LISCHKA, K

机构：

[1] TECH UNIV MUNICH,DEPT PHYS E16,D-85747 MUNICH,GERMANY

[2] UNIV GESAMTHSCH PADERBORN,INST OPTOELEKTR,D-33095 PADERBORN,GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 96卷 / 12期

关键词：

SEMICONDUCTORS; CRYSTAL STRUCTURE AND SYMMETRY; PHONONS; INELASTIC LIGHT SCATTERING; LUMINESCENCE;

D O I：

10.1016/0038-1098(95)00561-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We show that Raman scattering is a very sensitive and straightforward tool for the quantitative determination of a structural minority phase in GaN. In- and on-plane excitations, as well as polarization dependent measurements on predominantly cubic and hexagonal GaN samples, were performed and forward scattering effects were found. We were able to verify as an example the phase purity of a cubic GaN sample down to the 1% level.

引用

页码：943 / 949

页数：7

共 15 条

[1]

BRANDT O, IN PRESS

[2]

BROWN SW, 1994, MATER RES SOC SYMP P, V339, P503, DOI 10.1557/PROC-339-503

[3]

CARDONA M, 1982, TOP APPL PHYS, V50, P19

[4] III-V NITRIDES FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS [J].