FABRICATION OF INGAAS WIRES BY PREFERENTIAL MOLECULAR-BEAM EPITAXY GROWTH ON CORRUGATED INP SUBSTRATE

被引：9

作者：

FUJIKURA, H ^{[1
]}

IWAANA, T ^{[1
]}

HASEGAWA, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,INTERFACE QUANTUM ELECTR RES CTR,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期

关键词：

QUANTUM WIRE; INGAAS/INALAS; MBE; PREFERENTIAL GROWTH; SEM; PL; PHASE SEPARATION;

D O I：

10.1143/JJAP.33.919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fabrication technology of InGaAs wire structures by preferential molecular beam epitaxy growth on corrugated InP substrate was successfully developed for the first time. Growth was made on the substrates having V-grooves with (211)A or (111)A facets and wires were made in nonquantum regime. The effects of the growth conditions on the cross-sectional structure and photoluminescence (PL) properties were clarified. Wires grown on (111)A facets showed better structural and PL properties than those on (211)A facets. Insertion of an InGaAs low-temperature (LT) buffer layer was found to greatly improve the band-edge PL intensity. Under optimum conditions, the wire exhibited an intense PL emission with a narrow peak width at an energy position of InGaAs lattice-matched to InP. A defect-related emission is also observed and discussed.

引用

页码：919 / 924

页数：6

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