FABRICATION OF INGAAS WIRES BY PREFERENTIAL MOLECULAR-BEAM EPITAXY GROWTH ON CORRUGATED INP SUBSTRATE

被引：9

作者：

FUJIKURA, H ^{[1
]}

IWAANA, T ^{[1
]}

HASEGAWA, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,INTERFACE QUANTUM ELECTR RES CTR,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期

关键词：

QUANTUM WIRE; INGAAS/INALAS; MBE; PREFERENTIAL GROWTH; SEM; PL; PHASE SEPARATION;

D O I：

10.1143/JJAP.33.919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fabrication technology of InGaAs wire structures by preferential molecular beam epitaxy growth on corrugated InP substrate was successfully developed for the first time. Growth was made on the substrates having V-grooves with (211)A or (111)A facets and wires were made in nonquantum regime. The effects of the growth conditions on the cross-sectional structure and photoluminescence (PL) properties were clarified. Wires grown on (111)A facets showed better structural and PL properties than those on (211)A facets. Insertion of an InGaAs low-temperature (LT) buffer layer was found to greatly improve the band-edge PL intensity. Under optimum conditions, the wire exhibited an intense PL emission with a narrow peak width at an energy position of InGaAs lattice-matched to InP. A defect-related emission is also observed and discussed.

引用

页码：919 / 924

页数：6

共 50 条

[11] MOLECULAR-BEAM EPITAXY AND MIGRATION-ENHANCED EPITAXIAL-GROWTH OF INP USING POLYCRYSTALLINE INP AS PHOSPHORUS SOURCE
YANG, BX
HASEGAWA, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (02): : 704 - 710
[12] Photoluminescence and cathodoluminescence investigation of optical properties of InP-based InGaAs ridge quantum wires formed by selective molecular beam epitaxy
Fujikura, H
Hasegawa, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1333 - 1339
[13] Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy
Overberg, ME
Thaler, GT
Abernathy, CR
Theodoropoulou, NA
McCarthy, KT
Arnason, SB
Lee, JS
Lim, JD
Shim, SB
Suh, KS
Khim, ZG
Park, YD
Pearton, SJ
Hebard, AF
JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (05) : 298 - 306
[14] Growth of InNAs on GaAs(100) substrates by molecular-beam epitaxy
Sakai, S
Cheng, TS
Foxon, TC
Sugahara, T
Naoi, Y
Naoi, H
JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 471 - 475
[15] Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy
M. E. Overberg
G. T. Thaler
C. R. Abernathy
N. A. Theodoropoulou
K. T. McCarthy
S. B. Arnason
J. S. Lee
J. D. Lim
S. B. Shim
K. S. Suh
Z. G. Khim
Y. D. Park
S. J. Pearton
A. F. Hebard
Journal of Electronic Materials, 2003, 32 : 298 - 306
[16] Fabrication of quantum wire structures on non-planer InP substrates by molecular beam epitaxy
Sugaya, T
Nakagawa, T
Sugiyama, Y
IEICE TRANSACTIONS ON ELECTRONICS, 1996, E79C (11) : 1568 - 1572
[17] Growth of ZnO on Si substrate by plasma-assisted molecular beam epitaxy
Kawamoto, N
Fujita, M
Tatsumi, T
Horikoshi, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (12): : 7209 - 7212
[18] A NEW SI DOPING SOURCE FOR GAAS GROWTH BY MOLECULAR-BEAM EPITAXY
HORIKOSHI, Y
FAHY, MR
KAWASHIMA, M
FURUKAWA, K
FUJINO, M
MATSUMOTO, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (3B): : L413 - L416
[19] Growth of Zno on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy
Kawamoto, Noriaki
Fujita, Miki
Tatsumi, Tomohiko
Horikoshi, Yoshiji
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (12): : 7209 - 7212
[20] Fabrication of quantum wires and dots on GaAs (111)A patterned substrates by molecular beam epitaxy
Takebe, T
Watanabe, T
Fujita, K
SUPERLATTICES AND MICROSTRUCTURES, 1998, 24 (01) : 1 - 6

← 1 2 3 4 5 →