FABRICATION OF INGAAS WIRES BY PREFERENTIAL MOLECULAR-BEAM EPITAXY GROWTH ON CORRUGATED INP SUBSTRATE

被引：9
作者：
FUJIKURA, H [1 ]
IWAANA, T [1 ]
HASEGAWA, H [1 ]
机构：
[1] HOKKAIDO UNIV,INTERFACE QUANTUM ELECTR RES CTR,SAPPORO,HOKKAIDO 060,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期
关键词：
QUANTUM WIRE; INGAAS/INALAS; MBE; PREFERENTIAL GROWTH; SEM; PL; PHASE SEPARATION;
D O I：
10.1143/JJAP.33.919
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fabrication technology of InGaAs wire structures by preferential molecular beam epitaxy growth on corrugated InP substrate was successfully developed for the first time. Growth was made on the substrates having V-grooves with (211)A or (111)A facets and wires were made in nonquantum regime. The effects of the growth conditions on the cross-sectional structure and photoluminescence (PL) properties were clarified. Wires grown on (111)A facets showed better structural and PL properties than those on (211)A facets. Insertion of an InGaAs low-temperature (LT) buffer layer was found to greatly improve the band-edge PL intensity. Under optimum conditions, the wire exhibited an intense PL emission with a narrow peak width at an energy position of InGaAs lattice-matched to InP. A defect-related emission is also observed and discussed.
引用
收藏
页码：919 / 924
页数：6
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