GAAS TETRAHEDRAL QUANTUM DOT STRUCTURES FABRICATED USING SELECTIVE AREA MOCVD

被引：11

作者：

FUKUI, T ^{[1
]}

ANDO, S ^{[1
]}

HONDA, T ^{[1
]}

TORIYAMA, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, APPL ELECTR LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91128-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

New GaAs quantum dot structures, called tetrahedral quantum dots (TQD's), are proposed to make a zero-dimensional electron-hole system. The TQD's are surrounded by crystallographic facets fabricated using selective area MOCVD on GaAs(111)B substrates. The calculated energy sublevel structures of zero-dimensional electrons in a GaAs TQD show large quantum size effects, because electrons are confined three-dimensionally. GaAs and AlGaAs tetrahedral facet structures were grown using MOCVD on GaAs(111)B substrates partially etched into a triangular shape. Tetrahedral growth with {110} facets occurs in the triangular areas. The cathodoluminescence intensity map for GaAs tetrahedrons buried in AlGaAs shows the tetrahedral dot array.

引用

页码：236 / 240

页数：5

共 6 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].