GROWTH OF ALGAINP IN A HIGH-SPEED ROTATING-DISK OMVPE REACTOR

被引：12

作者：

OHMINE, T

KATAOKA, K

SATO, Y

机构：

[1] Mechanical Engineering Laboratory, TOSHIBA R and D Center, Saiwai-ku, Kawasaki, 210, 1, Komukaitoshiba-cho

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 05期

关键词：

AIGalnP; high speed rotation; OMVPE;

D O I：

10.1007/BF02658002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In an OMVPE reactor with a high speed rotating disk, growth of a quaternary material AIGalnP is carried out after a basic investigation on the GaAs growth rate uniformity. Experimental growth rate and growth efficiency results are compared with the theoretical results obtained from an infinite diameter rotating disk model. Distributions of the lattice mismatch, PL spectra and carrier concentration were measured to clarify the disk rotation effect on these properties. The main reason for non-uniformities is not the disk rotation but the temperature distribution on a substrate carrier. © 1990 The Mineral, Metal & Materials Society, Inc.

引用

页码：429 / 433

页数：5

共 12 条

[1]

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