ZERO-BIAS CONTACT RESISTANCES OF AU-GAAS SCHOTTKY BARRIERS

被引：6

作者：

MCCOLL, M

MILLEA, MF

MEAD, CA

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 08期

关键词：

D O I：

10.1016/0038-1101(71)90147-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：677 / &

共 25 条

[1]

BETHE HA, 1942, MIT4312 RAD LAB REP

[2]

BROOKS H, 1955, ADV ELECTRON, V7, P128

[3] TUNNELING SPECTROSCOPY IN GAAS [J].

CONLEY, JW ;

MAHAN, GD .

PHYSICAL REVIEW, 1967, 161 (03) :681-+

[4] ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].

CONLEY, JW ;

DUKE, CB ;

MAHAN, GD ;

TIEMANN, JJ .

PHYSICAL REVIEW, 1966, 150 (02) :466-&

[5] EXPERIMENTAL ASPECTS OF TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].

CONLEY, JW ;

TIEMANN, JJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2880-&

[6]

DUKE CL, PRIVATE COMMUNICATIO

[7]

FISTAL VI, 1969, HEAVILY DOPED SEMICO

[8]

FRANZ W, 1956, HDB PHYSIK, V17, P155

[9] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J].

HARRIS, JS ;

NANNICHI, Y ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4575-&

[10]

HENISCH HK, 1957, RECTIFYING SEMICONDU, P219

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