GROWTH OF HIGHLY ORIENTED TIN OXIDE THIN-FILMS BY LASER EVAPORATION DEPOSITION

被引：45

作者：

DAI, CM

SU, CS

CHUU, DS

机构：

[1] NATL TSING HUA UNIV,INST NUCL SCI,HSINCHU 300,TAIWAN

[2] NATL CHIAO TUNG UNIV,DEPT ELECTROPHYS,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 18期

关键词：

D O I：

10.1063/1.103998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conducting and transparent thin films of tin oxide were prepared by the laser evaporation of an undoped powder-pressed polycrystalline tin oxide target onto unheated substrates. After characterizing these films, the results reveal that the films are highly oriented and with a grain size ∼0.2 μm. The nearly stoichiometric deposition of tin oxide films with deposition rates exceeding 24 Å per pulse was obtained by this method. The lowest resistivity obtained is 3.0×10-3 Ω cm. The visible transmittance (between 4000 and 7000 Å) is above 75%.

引用

页码：1879 / 1881

页数：3

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