RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW - REPLY

[1] Bean Jesse S, COMMUNICATION

[2] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[3] DODSON BW, IN PRESS J CRYST GRO

[4] DODSON BW, IN PRESS PHYS REV B

[5] DODSON BW, 1988, APPL PHYS LETT, V52, pE852

[6] ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY [J]. APPLIED PHYSICS, 1975, 8 (03): : 199 - 205

[7] DETERMINATION OF THE CRITICAL LAYER THICKNESS OF SI1-XGEX/SI HETEROSTRUCTURES BY DIRECT OBSERVATION OF MISFIT DISLOCATIONS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 380 - 382

[8] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[9] DEPENDENCE OF CRITICAL THICKNESS ON GROWTH TEMPERATURE IN GEXSI1-X/SI SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (11) : 916 - 918

[10] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 229 - 229

[1] Bean Jesse S, COMMUNICATION

[2] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[3] DODSON BW, IN PRESS J CRYST GRO

[4] DODSON BW, IN PRESS PHYS REV B

[5] DODSON BW, 1988, APPL PHYS LETT, V52, pE852

[6] ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY [J]. APPLIED PHYSICS, 1975, 8 (03): : 199 - 205

[7] DETERMINATION OF THE CRITICAL LAYER THICKNESS OF SI1-XGEX/SI HETEROSTRUCTURES BY DIRECT OBSERVATION OF MISFIT DISLOCATIONS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 380 - 382

[8] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[9] DEPENDENCE OF CRITICAL THICKNESS ON GROWTH TEMPERATURE IN GEXSI1-X/SI SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (11) : 916 - 918

[10] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 229 - 229