RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW - REPLY

被引：1
作者：
DODSON, BW
TSAO, JY
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 12期
关键词：
D O I：
10.1063/1.100036
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1128 / 1128
页数：1
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