SUPPRESSION OF CVD DIAMOND GROWTH ON SIDE FACE OF SUBSTRATE IN PROCESS OF GAS-PHASE PRECIPITATION

被引：0
|
作者：
Teteruk, D. V. [1 ]
Bormashov, V. S. [2 ]
Tarelkin, S. A. [2 ]
Kornilov, N. V. [1 ]
Luparev, N. V. [2 ]
Kirichenko, A. N. [3 ]
机构：
[1] Fed State Budgetary Inst, Lab CVD Diamond Growth, Technol Inst Superhard & Novel Carbon Mat, Tsentralnaya Str,7a, Moscow 142190, Russia
[2] Fed State Budgetary Inst, Lab Phys Properties Nanostruct, Technol Inst Superhard & Novel Carbon Mat, Tsentralnaya Str,7a, Moscow 142190, Russia
[3] Fed State Budgetary Inst, Lab Spectral Res, Technol Inst Superhard & Novel Carbon Mat, Tsentralnaya Str,7a, Moscow 142190, Russia
来源：
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA | 2016年 / 59卷 / 08期
关键词：
diamond; CVD diamond; diamond growth suppression;
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
CVD diamond grows on the all surfaces of the substrate, including the side faces. However, the diamond layer on side faces may be undesirable. We proposed and developed the method to suppress the CVD diamond growth on the side faces using silicon wells. The optimal geometric dimensions of the wells were determined. The studies of the structural quality of the CVD diamond films were carried out.
引用
收藏
页码：64 / 68
页数：5
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