REFRACTORY MOSI2 AND MOSI2 POLYSILICON BULK CMOS CIRCUITS

被引：7

作者：

CHOW, TP ^{[1
]}

STECKL, AJ ^{[1
]}

JERDONEK, RT ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 02期

关键词：

D O I：

10.1109/EDL.1982.25469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：37 / 40

页数：4

共 10 条

[1]

Chow T. P., 1980, International Electron Devices Meeting. Technical Digest, P149

[2] SIZE EFFECTS IN MOSI2-GATE MOSFETS [J].

CHOW, TP ;

STECKL, AJ .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :297-299

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

CROWDER, BL ;

ZIRINSKY, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371

[4] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J].

GEIPEL, HJ ;

HSIEH, N ;

ISHAQ, MH ;

KOBURGER, CW ;

WHITE, FR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1417-1424

[5]

Leung B. C., 1980, International Electron Devices Meeting. Technical Digest, P827

[6] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET [J].

MOCHIZUKI, T ;

TSUJIMARU, T ;

KASHIWAGI, M ;

NISHI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1431-1435

[7]

MOCHIZUKI T, 1977, JPN J APPL PHYS S, V17, P37

[8] COSPUTTERED MOLYBDENUM SILICIDES ON THERMAL SIO2 [J].

MURARKA, SP ;

FRASER, DB ;

RETAJCZYK, TF ;

SHENG, TT .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5380-5385

[9]

Parrillo L. C., 1980, International Electron Devices Meeting. Technical Digest, P752

[10]

SHAH P, 1979, IEEE P IEDM, P465

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