THERMAL-STABILITY OF TITANIUM NITRIDE FOR SHALLOW JUNCTION SOLAR-CELL CONTACTS

被引：88

作者：

CHEUNG, NW

VONSEEFELD, H

NICOLET, MA

HO, F

ILES, P

机构：

[1] CALTECH,PASADENA,CA 91125

[2] APPL SOLAR ENERGY CORP,CITY IND,CA 91746

来源：

关键词：

D O I：

10.1063/1.329283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4297 / 4299

页数：3

共 8 条

[1] CHEUNG NW, 1980, P S THIN FILM INTERF, V80, P323
[2] FISCHER H, 1979, IEEE T ELECTRON DEV, V10, P459
[3] FOURNIER PR, 1975, Patent No. 3879746
[4] TIN AS A DIFFUSION BARRIER IN THE TI-PT-AU BEAM-LEAD METAL SYSTEM
GARCEAU, WJ
FOURNIER, PR
HERB, GK
[J]. THIN SOLID FILMS, 1979, 60 (02) : 237 - 247
[5] HOVEL HJ, 1975, SEMICONDUCTORS SEMIM, V2, P78
[6] MAENPAA M, 1980, P S THIN FILM INTERF, V80, P316
[7] DIFFUSION BARRIERS IN THIN-FILMS
NICOLET, MA
[J]. THIN SOLID FILMS, 1978, 52 (03) : 415 - 443
[8] TIN AND TAN AS DIFFUSION-BARRIERS IN METALLIZATIONS TO SILICON SEMICONDUCTOR-DEVICES
WITTMER, M
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 456 - 458