THERMAL-STABILITY OF TITANIUM NITRIDE FOR SHALLOW JUNCTION SOLAR-CELL CONTACTS

被引：88
作者：
CHEUNG, NW
VONSEEFELD, H
NICOLET, MA
HO, F
ILES, P
机构：
[1] CALTECH,PASADENA,CA 91125
[2] APPL SOLAR ENERGY CORP,CITY IND,CA 91746
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期
关键词：
D O I：
10.1063/1.329283
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4297 / 4299
页数：3
相关论文
共 8 条
[1]  
CHEUNG NW, 1980, P S THIN FILM INTERF, V80, P323
[2]  
FISCHER H, 1979, IEEE T ELECTRON DEV, V10, P459
[3]  
FOURNIER PR, 1975, Patent No. 3879746
[4]   TIN AS A DIFFUSION BARRIER IN THE TI-PT-AU BEAM-LEAD METAL SYSTEM [J].
GARCEAU, WJ ;
FOURNIER, PR ;
HERB, GK .
THIN SOLID FILMS, 1979, 60 (02) :237-247
[5]  
HOVEL HJ, 1975, SEMICONDUCTORS SEMIM, V2, P78
[6]  
MAENPAA M, 1980, P S THIN FILM INTERF, V80, P316
[7]   DIFFUSION BARRIERS IN THIN-FILMS [J].
NICOLET, MA .
THIN SOLID FILMS, 1978, 52 (03) :415-443
[8]   TIN AND TAN AS DIFFUSION-BARRIERS IN METALLIZATIONS TO SILICON SEMICONDUCTOR-DEVICES [J].
WITTMER, M .
APPLIED PHYSICS LETTERS, 1980, 36 (06) :456-458
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