SILICON DIFFUSED-ELEMENT PIEZORESISTIVE DIAPHRAGMS

被引:165
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TUFTE, ON
LONG, D
CHAPMAN, PW
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10.1063/1.1931164
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O59 [应用物理学];
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页码:3322 / &
相关论文
共 8 条
[1]   STRESS DEPENDENCE OF PIEZORESISTANCE EFFECT [J].
LONG, D .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) :2050-&
[2]   USE OF PIEZORESISTIVE MATERIALS IN THE MEASUREMENT OF DISPLACEMENT, FORCE, AND TORQUE [J].
MASON, WP ;
THURSTON, RN .
JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1957, 29 (10) :1096-1101
[3]   DEFORMATION AND FRACTURE OF SMALL SILICON CRYSTALS [J].
PEARSON, GL ;
READ, WT ;
FELDMANN, WL .
ACTA METALLURGICA, 1957, 5 (04) :181-191
[4]   SEMICONDUCTING STRESS TRANSDUCERS UTILIZING TRANSVERSE AND SHEAR PIEZORESISTANCE EFFECTS [J].
PFANN, WG ;
THURSTON, RN .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) :2008-&
[5]   PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J].
SMITH, CS .
PHYSICAL REVIEW, 1954, 94 (01) :42-49
[6]  
TIMOSHENKO S, 1940, THEORY PLATES SHELLS, P62
[7]  
TIMOSHENKO S, 1940, THEORY PLATES SHELLS, P59
[8]  
TUFTE ON, TO BE PUBLISHED