LOW CONTROL VOLTAGE PROGRAMMING OF FLOATING-GATE MOSFETS AND APPLICATIONS

被引：7

作者：

THOMSEN, A ^{[1
]}

BROOKE, MA ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,SCH MAT,ATLANTA,GA 30332

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS | 1994年 / 41卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/81.295240

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Programming of EEPROM devices fabricated in standard processes often requires voltages that exceed the bulk-drain breakdown voltages of integrated circuits, making the full integration of the programming circuitry difficult. This paper presents a modified EEPROM device with two tunneling injectors that allows bidirectional, accurately controlled programming with voltages in the range of normal supply voltages. Additionally, two static voltages are required. This scheme allows full integration of the programming circuitry on chip. Applications in the areas of offset reduction for OPAMPs in clocked and continuous time systems as well as in neural network learning are presented.

引用

页码：443 / 452

页数：10

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