ANOMALOUS ANOMALOUS WEAK-BEAM CONTRAST OF STACKING-FAULTS IN ZNSE ON (100) GAAS

The five configurations of fault groupings that are observed to form in thin (< 100nm) layers of ZnSe grown on GaAs are described and of these the characterisation of the apparently isolated and paired formats is discussed. Conventional and weak beam TEM methods were used and while paired faults proved to be intrinsic the apparently isolated faults exhibited an anomalous form of ''anomalous weak beam contrast'' suggesting, contrary to the interpretation of their two beam contrast, that they are in fact thin twins.