SIMULATION OF COSMIC-RAY INDUCED SOFT ERRORS AND LATCHUP IN INTEGRATED-CIRCUIT COMPUTER MEMORIES

被引:89
作者
KOLASINSKI, WA
BLAKE, JB
ANTHONY, JK
PRICE, WE
SMITH, EC
机构
[1] USAF,LOS ANGELES AF STN,SPACE & MISSILE SYST ORGAN,YDE,LOS ANGELES,CA 90009
[2] CALTECH,JET PROP LAB,PASADENA,CA 91103
[3] HUGHES AIRCRAFT CO,EL SEGUNDO,CA 90245
关键词
D O I
10.1109/TNS.1979.4330278
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Soft errors have been induced in solid-state static RAM's by iron nuclei from the Lawrence Berkeley Laboratory (LBL) Bevalac, in experiments designed to prove the ability of iron-group cosmic rays to generate such errors. Subsequently, various de-lidded device types were tested in beams of argon and krypton ions from the LBL 88-inch Cyclotron, at energies near 2 MeV/nucleon. The latter tests showed that some devices are essentially immune to bit error while others are quite susceptible. Good agreement was obtained with model predictions in cases where the latter exist. Latchup, whose cause we attribute to individual heavy ions, was also observed in some device types. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:5087 / 5091
页数:5
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