IMPROVING THE UNIFORMITY OF POLY-SI FILMS USING A NEW EXCIMER LASER ANNEALING METHOD FOR GIANT-MICROELECTRONICS

被引：54

作者：

KURIYAMA, H ^{[1
]}

KUWAHARA, T ^{[1
]}

ISHIDA, S ^{[1
]}

NOHDA, T ^{[1
]}

SANO, K ^{[1
]}

IWATA, H ^{[1
]}

NOGUCHI, S ^{[1
]}

KIYAMA, S ^{[1
]}

TSUDA, S ^{[1
]}

NAKANO, S ^{[1
]}

OSUMI, M ^{[1
]}

KUWANO, Y ^{[1
]}

机构：

[1] GIANT ELECTR TECHNOL CO LTD,CHUO KU,TOKYO 103,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

POLY-SI; EXCIMER LASER; LASER ANNEALING; UNIFORMITY; FIELD EFFECT MOBILITY; SOLIDIFICATION VELOCITY;

D O I：

10.1143/JJAP.31.4550

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Film uniformity is the main problem when applying laser-recrystallised poly-Si films to thin film transistors (TFTs) in giant micro electronics. However, this has been dramatically improved by a new excimer laser annealing method in which the solidification process of molten Si is controlled by low-temperature (less-than-or-equal-to 400-degrees-C) substrate heating during excimer laser annealing. Poly-Si TFT fabricated around the laser irradiation overlap region exhibited a high field effect mobility uniformity of within +/- 8%.

引用

页码：4550 / 4554

页数：5

共 6 条

[1] LOW-TEMPERATURE CRYSTALLIZATION OF AMORPHOUS-SILICON USING AN EXCIMER LASER [J].