SINGLE POLARIZATION OPTICAL WAVE-GUIDE ON SILICON

被引：9

作者：

DEBRABANDER, GN ^{[1
]}

BOYD, JT ^{[1
]}

JACKSON, HE ^{[1
]}

机构：

[1] UNIV CINCINNATI,DEPT PHYS,CINCINNATI,OH 45221

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 03期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/3.81365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single polarization optical waveguide structure is introduced demonstrated experimentally. The optical waveguide structure considered is a silicon nitride film deposited onto an oxidized silicon wafer so as to form a single-mode planar waveguide. Single polarization is achieved by choosing layer thicknesses so that the attenuation due to substrate coupling for the TM mode is much larger than that for the TE mode. Calculations are presented to define ranges of design parameters over which TM attenuation can be 3-4 orders of magnitude higher than that for TE. In one sample having a TE loss of 0.28 dB/cm measured at a wavelength of 0.63-mu-m a ratio of TM to TE attenuation of over 750 is experimentally demonstrated.

引用

页码：575 / 579

页数：5

共 16 条

[1]

BORLAND WC, 1990, IEEE J QUANTUM ELECT, V23, P1172

[2] CO2-LASER ANNEALING OF SI3N4, NB2O5, AND TA2O5 THIN-FILM OPTICAL-WAVEGUIDES TO ACHIEVE SCATTERING LOSS REDUCTION [J].