PREPARATION AND PROPERTIES OF BULK GAXINL-XAS CRYSTALS

被引：32
作者：
LEU, YT
THIEL, FA
SCHEIBER, H
RUBIN, JJ
MILLER, BI
BACHMANN, KJ
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] BELL TEL LABS INC,HOLMDEL,NJ 07733
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 05期
关键词：
energy gap; III-V Alloys; photoluminescence; Zone leveling;
D O I：
10.1007/BF02657085
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The phase relations at the InAs/GaAs pseudo-binary and their implications regarding the growth of Ga In As crystals from the melt by gradient freezing and zone leveling are discussed. Homogeneous crystals have been grown for x > O.85 by gradient freezing. For compositions x ≤ 0.85 zone leveling is the only melt growth technique that results in macroscopically homogeneous crack-free crystals. However, compositional inhomogeneities on a microscopic scale are difficult to suppress in this range. The band gap of Gax In1-x As at 77K varies as Eg = 0.1+13+ 0.720×+0.3T5×2. © 1979 AIME.
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页码：663 / 674
页数：12
相关论文
共 25 条
[1]   GROWTH OF INP CRYSTALS FROM MELT [J].
BACHMANN, KJ ;
BUEHLER, E .
JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (01) :279-302
[2]   INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE [J].
BACHMANN, KJ ;
SHAY, JL .
APPLIED PHYSICS LETTERS, 1978, 32 (07) :446-448
[3]  
BUDURKOV YN, 1975, FIZ TEKH POLUPROVODN, V9, P488
[4]  
BUEHLER E, 1974, J CRYS GROWTH, V35, P60
[5]   OPTICAL PROPERTIES OF N-TYPE INDIUM ARSENIDE IN FUNDAMENTAL ABSORPTION EDGE REGION [J].
DIXON, JR ;
ELLIS, JM .
PHYSICAL REVIEW, 1961, 123 (05) :1560-&
[6]   THERMAL AND ELECTRICAL TRANSPORT IN INAS-GAAS ALLOYS [J].
HOCKINGS, EF ;
KUDMAN, I ;
SEIDEL, TE ;
SCHMELZ, CM ;
STEIGMEIER, EF .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2879-+
[7]  
KHLYSTOVSKAYA MD, 1973, ISV AKAD NAUK SSSR N, V9, P1256
[8]   ZN-DIFFUSED LASER JUNCTIONS IN INXGA1-XAS AND INASXP1-X GROWN FROM IN SOLUTION AT CONSTANT TEMPERATURE [J].
MACKSEY, HM ;
ZACK, GW ;
HOLONYAK, N ;
CAMPBELL, JC .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3533-&
[9]  
MIRTSKHULAVA AA, 1977, ZH FIZ KHIM+, V51, P513
[10]   CRACK FORMATION IN INP-GAXIN1-XAS-INP DOUBLE-HETEROSTRUCTURE FABRICATION [J].
NAGAI, H ;
NOGUCHI, Y .
APPLIED PHYSICS LETTERS, 1976, 29 (11) :740-741
123