HIGH-MOBILITY BOTTOM-GATE THIN-FILM TRANSISTORS WITH LASER-CRYSTALLIZED AND HYDROGEN-RADICAL-ANNEALED POLYSILICON FILMS

被引：25
作者：
SHIMIZU, K
HOSOYA, H
SUGIURA, O
MATSUMURA, M
机构：
[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, 152, O-okayama, Meguro-ku
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1991年 / 30卷 / 12B期
关键词：
BOTTOM-GATE THIN-FILM TRANSISTOR; POLYSILICON; LASER CRYSTALLIZATION; POSTHYDROGENATION; PHOTOGENERATED HYDROGEN-RADICAL ANNEALING;
D O I：
10.1143/JJAP.30.3704
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-performance bottom-gate thin-film transistors (TFTs) have been realized with excimer-laser-crystallized polysilicon films, for the first time. TFT characteristics were greatly dependent on the silicon film thickness as well as the pulsed-laser energy density. It was found also that posthydrogenation based on hydrogen-radical annealing improves the TFT characteristics drastically. The field-effect mobilities exceeded 220 cm2/Vs for electrons and 140 cm2/Vs for holes, respectively.
引用
收藏
页码：3704 / 3709
页数：6
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