EXCITONIC EFFECTS IN LOW-DENSITY ELECTRON-HOLE PLASMA IN INGAAS/INP QUANTUM-WELLS UNDER MAGNETIC-FIELD

被引：2

作者：

BUTOV, LV

KULAKOVSKII, VD

FORCHEL, A

GRUTZMACHER, D

机构：

[1] UNIV WURZBURG,W-8700 WURZBURG,GERMANY

[2] RHEIN WESTFAL TH AACHEN,W-5100 AACHEN,GERMANY

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 10卷 / 04期

关键词：

D O I：

10.1016/0749-6036(91)90315-I

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The magnetic-field and excitation-density dependencies of the photoluminescence of undoped In0.53Ga0.47As/InP single quantum well structures have been investigated. A clear transition from excitonic to free-carrier-like recombination has been observed while changing the electron-hole density from 1010 to 1012 cm-2. Excitonic correlations are found to be well pronounced for carriers at the upper partly occupied Landau levels. © 1991.

引用

页码：489 / 492

页数：4

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