GRAIN-BOUNDARY STATES AND VARISTOR BEHAVIOR IN SILICON BICRYSTALS

被引：123
作者：
SEAGER, CH
PIKE, GE
机构：
[1] Sandia Laboratories, Albuquerque
来源：
APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 09期
关键词：
D O I：
10.1063/1.91264
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The energy density of states in a Si grain boundary has been quantitatively determined for the first time. Since the deconvolution scheme used in this determination is a technique previously unapplied to real materials, the applicability of the model and the validity of the results were experimentally verified by comparing conductance and capacitance data. Additionally, a high-voltage varistor characteristic (highly non-Ohmic current) was observed. This shows for the first time that a simple grain boundary without intergranular additives is capable of a strong varistor behavior (nonlinearity coefficient α≳20).
引用
收藏
页码：709 / 711
页数：3
相关论文
共 19 条
[1]  
BERNASCONI J, 1977, SOLID STATE COMMUN, V21, P867, DOI 10.1016/0038-1098(77)90351-9
[2]   ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J].
CARD, HC ;
YANG, ES .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :397-402
[3]  
Cleland J. W., 1979, Neutron Transmutation Doping in Semiconductors, P261
[4]   CONDUCTION MECHANISM OF NON-OHMIC ZINC-OXIDE CERAMICS [J].
EDA, K .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2964-2972
[5]   CHARACTERISTICS OF POLYCRYSTALLINE SILICON INTEGRATED-CIRCUITS [J].
GOROHOV, VA ;
MATSON, EA ;
POLYAKOV, CA .
THIN SOLID FILMS, 1976, 35 (02) :149-153
[6]   INFLUENCE OF POLYCRYSTALLINITY ON TRANSCONDUCTANCE OF THIN-FILM TRANSISTOR [J].
JERHOT, J ;
SNEJDAR, V .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1972, 33 (03) :357-&
[7]  
JOHNSON DL, 1976, 6TH P INT MAT S CER, P598
[8]  
KORSH GJ, 1978, SOLID STATE ELECTRON, V21, P1045, DOI 10.1016/0038-1101(78)90183-1
[9]  
Levine J. D., 1975, Critical Reviews in Solid State Sciences, V5, P597, DOI 10.1080/10408437508243517
[10]   NONOHMIC PROPERTIES OF ZINC OXIDE CERAMICS [J].
MATSUOKA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (06) :736-&
12