RESONANT TUNNELING THROUGH SINGLE LAYER HETEROSTRUCTURES

被引：111

作者：

LIU, HC ^{[1
]}

机构：

[1] UNIV PITTSBURGH,DEPT PHYS,APPL TECHNOL LAB,PITTSBURGH,PA 15260

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期

关键词：

D O I：

10.1063/1.98817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1019 / 1021

页数：3

共 21 条

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APPLIED PHYSICS LETTERS, 1987, 50 (18) :1246-1248

[8]

LIU HC, IN PRESS SUPERLATTIC

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APPLIED PHYSICS LETTERS, 1985, 47 (05) :490-492

[10] Indirect band-gap tunnelling through a (100) GaAs/AlAs/GaAs heterostructure [J].

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