DEEP LEVELS INDUCED IN ANNEALED CZ SILICON

被引：2
作者：
IKEDA, K
TAKAOKA, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1982年 / 21卷 / 01期
关键词：
D O I：
10.7567/JJAPS.21S1.121
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：121 / 125
页数：5
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