SYNTHESIS OF CARBON NITRIDE IN PLASMA-ARC

被引：71

作者：

MATSUMOTO, O ^{[1
]}

KOTAKI, T ^{[1
]}

SHIKANO, H ^{[1
]}

TAKEMURA, K ^{[1
]}

TANAKA, S ^{[1
]}

机构：

[1] AOYAMA GAKUIN UNIV,DEPT CHEM,SETAGAYA KU,TOKYO 157,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 02期

关键词：

D O I：

10.1149/1.2054776

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Crystalline carbon nitride was easily synthesized from CN radicals prepared by the reaction between N atoms and a graphite rod anode in the argon-nitrogen plasma arc at atmospheric pressure. The deposits on Si (111) wafer substrate were identified as beta-C3N4 by the x-ray diffraction method, and the C-N bond was detected in the deposit by infrared (IR) spectroscopy and x-ray photoelectron spectroscopy (XPS). The existence of sp3 orbital on the C atom in C3N4 is presumed from the XPS spectra of the valence band of the deposit.

引用

页码：L16 / L18

页数：3

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