1.3-MU-M INGAAS GAAS STRAINED-QUANTUM-WELL LASERS WITH INGAP CLADDING LAYER

被引：17

作者：

UCHIDA, T

KURAKAKE, H

SODA, H

YAMAZAKI, S

机构：

[1] Fujitsu Laboratories Ltd., Atsugi 243-01

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 07期

关键词：

SEMICONDUCTOR JUNCTION LASERS; VAPOR PHASE EPITAXIAL GROWTH;

D O I：

10.1049/el:19940378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using MOVPE, we fabricated strained quantum well 1.3 mum lasers with an InGaP cladding layer on a GaAs substrate. The lasers had a high gain coefficient of 60cm-1. Lasers with high reflection facets had a low threshold current density of 500 A/cm2, and a high characteristic temperature of 100 K.

引用

页码：563 / 565

页数：3