1.3-MU-M INGAAS GAAS STRAINED-QUANTUM-WELL LASERS WITH INGAP CLADDING LAYER

被引：17
|
作者：
UCHIDA, T
KURAKAKE, H
SODA, H
YAMAZAKI, S
机构：
[1] Fujitsu Laboratories Ltd., Atsugi 243-01
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 07期
关键词：
SEMICONDUCTOR JUNCTION LASERS; VAPOR PHASE EPITAXIAL GROWTH;
D O I：
10.1049/el:19940378
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using MOVPE, we fabricated strained quantum well 1.3 mum lasers with an InGaP cladding layer on a GaAs substrate. The lasers had a high gain coefficient of 60cm-1. Lasers with high reflection facets had a low threshold current density of 500 A/cm2, and a high characteristic temperature of 100 K.
引用
收藏
页码：563 / 565
页数：3
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