INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY

被引：85
作者：
MORKOC, H [1 ]
DRUMMOND, TJ [1 ]
FISCHER, R [1 ]
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期
关键词：
D O I：
10.1063/1.330514
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1030 / 1033
页数：4
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