ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS

被引：11
作者：
NAKAMURA, K [1 ]
KAMOSHIDA, M [1 ]
机构：
[1] NIPPON ELECT CO LTD, IC DIV, 1753 SHIMONUMABE, KAWASAKI 211, JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 01期
关键词：
D O I：
10.1063/1.1662981
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：334 / 340
页数：7
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