ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS

被引：11

作者：

NAKAMURA, K ^{[1
]}

KAMOSHIDA, M ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD, IC DIV, 1753 SHIMONUMABE, KAWASAKI 211, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.1662981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：334 / 340

页数：7

共 16 条

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[3]

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[8] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE [J].

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[9] CHARACTERISTICS OF P-CHANNEL MOS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS [J].

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[10]

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