INTENSITY-DEPENDENT ABSORPTION IN SEMICONDUCTORS

被引：27

作者：

STEWART, AF

BASS, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 11期

关键词：

D O I：

10.1063/1.91756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1040 / 1043

页数：4

共 14 条

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VANSTRYLAND, EW ;

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APPLIED PHYSICS LETTERS, 1979, 34 (02) :142-144

[3] 2-PHOTON ABSORPTION IN SEMICONDUCTORS WITH PICOSECOND LASER-PULSES [J].

BECHTEL, JH ;

SMITH, WL .

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[4]

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[5] SIMPLE TECHNIQUE FOR LONGITUDINAL MODE SELECTION [J].

BUA, D ;

BASS, M ;

FRADIN, D .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (12) :916-&

[6]

BUBE RH, 1976, PHOTOCONDUCTIVITY RE, P118

[7]

Goppert-Mayer M, 1931, ANN PHYS-BERLIN, V9, P273

[8]

MITRA SS, 1980, NBS574 US SPEC PUBL, P71

[9] 2-PHOTON ABSORPTION IN ZINCBLENDE SEMICONDUCTORS [J].

PIDGEON, CR ;

WHERRETT, BS ;

JOHNSTON, AM ;

DEMPSEY, J ;

MILLER, A .

PHYSICAL REVIEW LETTERS, 1979, 42 (26) :1785-1788

[10] INDIRECT 2-PHOTON TRANSITIONS IN SI AT 1.06MUM [J].

REINTJES, JF ;

MCGRODDY, JC .

PHYSICAL REVIEW LETTERS, 1973, 30 (19) :901-903

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