BALLISTIC-HOLE SPECTROSCOPY OF INTERFACES

被引：39

作者：

HECHT, MH ^{[1
]}

BELL, LD ^{[1
]}

KAISER, WJ ^{[1
]}

DAVIS, LC ^{[1
]}

机构：

[1] FORD MOTOR CO, RES STAFF, DEARBORN, MI 48121 USA

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.42.7663

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new technique allows direct control and measurement of ballistic-hole transport through interfaces. This novel spectroscopy has been applied to determine the detailed properties of hole transmission through metal-semiconductor interfaces and probe the valence-band structure of subsurface semiconductor heterostructures. The ballistic-hole probe is created by electron-tunneling-microscopy methods and provides high-spatial-resolution capabilities. © 1990 The American Physical Society.

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页码：7663 / 7666

页数：4

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