HETEROEPITAXIAL SI/AL2O3/SI STRUCTURES

被引：44

作者：

ISHIDA, M ^{[1
]}

SAWADA, K ^{[1
]}

YAMAGUCHI, S ^{[1
]}

NAKAMURA, T ^{[1
]}

SUZAKI, T ^{[1
]}

机构：

[1] TOYOKO KAGAKU CO LTD,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 06期

关键词：

D O I：

10.1063/1.102434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：556 / 558

页数：3

共 10 条

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[5] EPITAXIAL AL2O3 FILMS ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

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[6]

ISHIDA M, 1988, 5TH INT WORKSH FUT E, P213

[7]

ISHIDA M, 1988, MATER RES SOC S P, V116, P375

[8] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J].

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APPLIED PHYSICS LETTERS, 1982, 40 (01) :66-68

[9] METALORGANIC MOLECULAR-BEAM EPITAXY OF GAMMA-AL2O3 INSULATOR FILMS ON SI WITH LASER IRRADIATION [J].

SAWADA, K ;

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JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :494-499

[10] METALORGANIC MOLECULAR-BEAM EPITAXY OF GAMMA-AL2O3 FILMS ON SI AT LOW GROWTH TEMPERATURES [J].

SAWADA, K ;

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APPLIED PHYSICS LETTERS, 1988, 52 (20) :1672-1674

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