HETEROEPITAXIAL SI/AL2O3/SI STRUCTURES

被引：44

作者：

ISHIDA, M ^{[1
]}

SAWADA, K ^{[1
]}

YAMAGUCHI, S ^{[1
]}

NAKAMURA, T ^{[1
]}

SUZAKI, T ^{[1
]}

机构：

[1] TOYOKO KAGAKU CO LTD,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 06期

关键词：

D O I：

10.1063/1.102434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：556 / 558

页数：3

共 10 条

[1] GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY USING SILANE
HIRAYAMA, H
TATSUMI, T
OGURA, A
AIZAKI, N
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2213 - 2215
[2] VAPOR-PHASE EPITAXIAL-GROWTH OF MGO . AL2O3
IHARA, M
ARIMOTO, Y
JIFUKU, M
KIMURA, T
KODAMA, S
YAMAWAKI, H
YAMAOKA, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2569 - 2573
[3] GROWTH AND PROPERTIES OF SI FILMS ON SAPPHIRE WITH PREDEPOSITED AMORPHOUS SI LAYERS
ISHIDA, M
YASUDA, Y
OHYAMA, H
WAKAMATSU, H
ABE, H
NAKAMURA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (12) : 4073 - 4078
[4] DEPOSITION OF A SI MONOLAYER ON SAPPHIRE USING AN ARF EXCIMER LASER FOR SI EPITAXIAL-GROWTH
ISHIDA, M
TANAKA, H
SAWADA, K
NAMIKI, A
NAKAMURA, T
OHTAKE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 2087 - 2091
[5] EPITAXIAL AL2O3 FILMS ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
ISHIDA, M
KATAKABE, I
NAKAMURA, T
OHTAKE, N
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (16) : 1326 - 1328
[6] ISHIDA M, 1988, 5TH INT WORKSH FUT E, P213
[7] ISHIDA M, 1988, MATER RES SOC S P, V116, P375
[8] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI
ISHIWARA, H
ASANO, T
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68
[9] METALORGANIC MOLECULAR-BEAM EPITAXY OF GAMMA-AL2O3 INSULATOR FILMS ON SI WITH LASER IRRADIATION
SAWADA, K
ISHIDA, M
NAKAMURA, T
SUZAKI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 494 - 499
[10] METALORGANIC MOLECULAR-BEAM EPITAXY OF GAMMA-AL2O3 FILMS ON SI AT LOW GROWTH TEMPERATURES
SAWADA, K
ISHIDA, M
NAKAMURA, T
OHTAKE, N
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (20) : 1672 - 1674

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