PLANAR SILICON FIELD-EFFECT TRANSISTORS WITH LANGMUIR-BLODGETT GATE INSULATORS

被引：19
|
作者：
FUNG, CD [1 ]
LARKINS, GL [1 ]
机构：
[1] CASE WESTERN RESERVE UNIV,CASE INST TECHN,DEPT MACROMOLEC SCI,CLEVELAND,OH 44106
来源：
THIN SOLID FILMS | 1985年 / 132卷 / 1-4期
关键词：
D O I：
10.1016/0040-6090(85)90454-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：33 / 39
页数：7
相关论文
共 50 条
  • [21] Silicon Tunneling Field-Effect Transistors With Tunneling in Line With the Gate Field
    Fischer, Inga A.
    Bakibillah, A. S. M.
    Golve, Murali
    Haehnel, Daniel
    Isemann, Heike
    Kottantharayil, Anil
    Oehme, Michael
    Schulze, Joerg
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) : 154 - 156
  • [22] Field-effect doping phenomenon in an organic semiconductor layer deposited by the Langmuir-Blodgett technique
    Ikegami, K
    Ohnuki, H
    Izumi, M
    CURRENT APPLIED PHYSICS, 2006, 6 (04) : 808 - 812
  • [23] Easily Processable Highly Ordered Langmuir-Blodgett Films of Quaterthiophene Disiloxane Dimer for Mono layer Organic Field-Effect Transistors
    Sizov, Alexey S.
    Anisimov, Daniil S.
    Agina, Elena V.
    Borshchey, Oleg V.
    Bakirov, Artem V.
    Shcherbina, Maxim A.
    Grigorian, Souren
    Bruevich, Vladimir V.
    Chvalun, Sergei N.
    Paraschuk, Dmitry Yu.
    Ponomarenko, Sergei A.
    LANGMUIR, 2014, 30 (50) : 15327 - 15334
  • [24] MOLECULAR FIELD-EFFECT TRANSISTORS USING CONDUCTING POLYMER LANGMUIR-BLODGETT-FILMS
    PALOHEIMO, J
    KUIVALAINEN, P
    STUBB, H
    VUORIMAA, E
    YLILAHTI, P
    APPLIED PHYSICS LETTERS, 1990, 56 (12) : 1157 - 1159
  • [25] A GAS SENSOR FABRICATED WITH FIELD-EFFECT TRANSISTORS AND LANGMUIR-BLODGETT-FILM OF PORPHYRIN
    SUN, LY
    GU, CZ
    KE, W
    CHAO, XZ
    LI, TJ
    HU, GY
    SUN, JY
    THIN SOLID FILMS, 1992, 210 (1-2) : 486 - 488
  • [26] High-k polymeric gate insulators for organic field-effect transistors
    Yu, Haiyang
    Chen, Yihang
    Wei, Huanhuan
    Gong, Jiangdong
    Xu, Wentao
    NANOTECHNOLOGY, 2019, 30 (20)
  • [27] ELECTRONIC AND OPTICAL STUDIES WITH LANGMUIR-BLODGETT TRANSISTORS
    PALOHEIMO, J
    STUBB, H
    YLILAHTI, P
    DYREKLEV, P
    INGANAS, O
    THIN SOLID FILMS, 1992, 210 (1-2) : 283 - 286
  • [28] ELECTRICAL CHARACTERIZATION OF PLANAR SILICON NANOWIRE FIELD-EFFECT TRANSISTORS
    Rosaz, G.
    Salem, B.
    Pauc, N.
    Gentile, P.
    Potie, A.
    Solanki, A.
    Bassani, F.
    Baron, T.
    Cagnon, L.
    INTERNATIONAL JOURNAL OF NANOSCIENCE, 2012, 11 (04)
  • [29] Fabrication of field-effect transistor using charge-transfer-complex Langmuir-Blodgett films
    Sakuma, H
    Iizuka, M
    Nakamura, M
    Kudo, K
    Tanaka, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (4B): : 2727 - 2729
  • [30] Photovoltaic effect in Langmuir-Blodgett corbatine films on silicon surface
    Komolov, SA
    Shamburg, K
    Gerasimova, NB
    Morozov, AO
    ZHURNAL TEKHNICHESKOI FIZIKI, 1996, 66 (07): : 185 - 189
12345