PLANAR SILICON FIELD-EFFECT TRANSISTORS WITH LANGMUIR-BLODGETT GATE INSULATORS

被引：19
作者：
FUNG, CD [1 ]
LARKINS, GL [1 ]
机构：
[1] CASE WESTERN RESERVE UNIV,CASE INST TECHN,DEPT MACROMOLEC SCI,CLEVELAND,OH 44106
来源：
THIN SOLID FILMS | 1985年 / 132卷 / 1-4期
关键词：
D O I：
10.1016/0040-6090(85)90454-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：33 / 39
页数：7
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