THEORY OF PHOTOELECTRIC EMISSION FROM SEMICONDUCTORS

被引：383
作者：
KANE, EO
机构：
来源：
PHYSICAL REVIEW | 1962年 / 127卷 / 01期
关键词：
D O I：
10.1103/PhysRev.127.131
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：131 / &
相关论文
共 8 条
[1]   THEORY OF PHOTOELECTRIC EMISSION FROM METALS [J].
FAN, HY .
PHYSICAL REVIEW, 1945, 68 (1-2) :43-52
[2]   DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON [J].
GOBELI, GW ;
ALLEN, FG .
PHYSICAL REVIEW, 1962, 127 (01) :141-&
[3]   TRANSITION PROBABILITY FOR PHOTOELECTRIC EMISSION FROM SEMICONDUCTORS [J].
HUNTINGTON, HB ;
APKER, L .
PHYSICAL REVIEW, 1953, 89 (02) :352-356
[4]   EXTENSION OF MAKINSON THEORY OF PHOTOELECTRIC EMISSION TO A PERIODIC POTENTIAL [J].
HUNTINGTON, HB .
PHYSICAL REVIEW, 1953, 89 (02) :357-358
[5]  
MACCOLL LA, 1951, BELL SYST TECH J, V30, P588
[6]   THE SURFACE PHOTOELECTRIC EFFECT [J].
MAKINSON, REB .
PHYSICAL REVIEW, 1949, 75 (12) :1908-1911
[7]   OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV [J].
PHILIPP, HR ;
TAFT, EA .
PHYSICAL REVIEW, 1960, 120 (01) :37-38
[8]  
SCHEER JJ, 1961, PHILIPS RES REP, V16, P323
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