POINT-DEFECT MOBILITY IN IRRADIATED GAAS

被引：0

作者：

KOLCHENKO, TI

LOMAKO, VM

MARONCHUK, IE

SEVCHENKO, AN

机构：

来源：

RADIATION EFFECTS LETTERS | 1980年 / 57卷 / 05期

关键词：

D O I：

10.1080/01422448008228592

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：137 / 142

页数：6

共 9 条

[1]

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[2] ANNEALING OF ELECTRON-IRRADIATED GAAS [J].

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GRAFT, RD .

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[3]

BUDYASHKINA SV, 1976, PHYSICAL CHEM MICROE, V3

[4] NEW EMPIRICAL RELATIONS FOR STOPPING POWER AND RANGE OF CHARGED-PARTICLES [J].

CHAUBEY, AK ;

GUPTA, HV .

REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :321-329

[5] INTRODUCTION AND ANNEALING OF DEFECTS IN N-TYPE GAAS FOLLOWING IRRADIATION WITH ELECTRONS AND GAMMA-RAYS [J].

KOLCHENKO, TI ;

LOMAKO, VM .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2) :67-72

[6]

KOLCHENKO TI, 1975, FIZ TEKH POLUPROV, V9, P1757

[7] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

KIMERLING, LC .

PHYSICAL REVIEW B, 1977, 15 (10) :4874-4882

[8]

Lomako V M, 1976, FIZ TEKH POLUPROV, V10, P900

[9]

Thommen K., 1970, Radiation Effects, V2, P201, DOI 10.1080/00337577008243053

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