共 50 条
- [43] LOW-TEMPERATURE ELECTRON-TRANSPORT NEAR THE MOBILITY EDGE OF AMORPHOUS-SILICON PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (04): : L113 - L118
- [44] Mechanism for the low-temperature alignment of distortions of the VGaTeAs complexes in n-type GaAs under uniaxial pressure ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS, 1997, 200 : 217 - 224
- [45] Low temperature breakdown and current filamentation in n-type GaAs with homogeneous and partially ordered Si doping Semicond Sci Technol, 6 (775-784):
- [46] LOW-TEMPERATURE CONDUCTIVITY OF STRONGLY COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 554 - 558
- [47] LOW-TEMPERATURE INFRARED-ABSORPTION OF N-TYPE GAP PHYSICAL REVIEW B, 1987, 36 (18): : 9662 - 9670
- [48] LOW-TEMPERATURE RECOVERY OF IRRADIATION DEFECTS IN N-TYPE GERMANIUM PHYSICAL REVIEW B, 1974, 9 (10): : 4373 - 4391
- [50] LOW-TEMPERATURE PHOTOMAGNETOELECTRIC AND PHOTOCONDUCTIVE EFFECTS IN N-TYPE INAS PHYSICAL REVIEW B, 1971, 4 (12): : 4633 - &