LOW-TEMPERATURE ELECTRON-TRANSPORT IN N-TYPE SI AND GAAS

被引：0
|
作者：
MEYER, JR [1 ]
BARTOLI, FJ [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1981年 / 26卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：459 / 459
页数：1
相关论文
共 50 条
  • [1] LOW-TEMPERATURE ELECTRON-TRANSPORT IN GAAS
    MEYER, JR
    BARTOLI, FJ
    SOLID STATE COMMUNICATIONS, 1982, 41 (01) : 19 - 22
  • [2] LOW-TEMPERATURE PIEZOELECTRIC STIFFENING IN N-TYPE GAAS
    BOYLE, WF
    SLADEK, RJ
    IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1972, SU19 (03): : 408 - &
  • [3] LOW-TEMPERATURE MAGNETORESISTANCE IN DEGENERATE N-TYPE SI
    KHOSLA, RP
    FISCHER, JR
    PHYSICAL REVIEW B, 1972, 6 (10): : 4073 - &
  • [4] RECOVERY OF LOW-TEMPERATURE ELECTRON-IRRADIATION-INDUCED DAMAGE IN N-TYPE GAAS
    THOMMEN, K
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 375 - &
  • [5] LOW-TEMPERATURE ELECTRON-TRANSPORT IN METALLIC GLASSES
    HARRIS, R
    STROMOLSEN, JO
    TOPICS IN APPLIED PHYSICS, 1983, 53 : 325 - 342
  • [6] SWITCHING TIME IN LOW-TEMPERATURE IMPURITY BREAKDOWN IN N-TYPE GAAS
    ZVEREV, LP
    MINKOV, GM
    NEGASHEV, SA
    KRUZHAEV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (06): : 716 - 717
  • [7] LOW TEMPERATURE NON-OHMIC TRANSPORT IN N-TYPE GAAS
    CRANDALL, R
    GWOZDZ, P
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (03): : 407 - &
  • [8] LOW-TEMPERATURE BREAKDOWN AND CURRENT FILAMENTATION IN N-TYPE GAAS WITH HOMOGENEOUS AND PARTIALLY ORDERED SI DOPING
    KOSTIAL, H
    ASCHE, M
    HEY, R
    PLOOG, K
    KEHRER, B
    QUADE, W
    SCHOLL, E
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (06) : 775 - 784
  • [9] ELECTRON-TRANSPORT IN HEAVILY DOPED AND COMPENSATED N-TYPE GAAS IN THE TEMPERATURE-RANGE 4.2-300-K
    SAXENA, TK
    BALA, S
    AGARWAL, SK
    MATHUR, PC
    CHAUDHURI, KD
    PHYSICAL REVIEW B, 1980, 22 (06): : 2962 - 2967
  • [10] LOW-TEMPERATURE OHMIC AU/SB CONTACTS TO N-TYPE SI
    WERNER, JH
    SPADACCINI, U
    BANHART, F
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (02) : 994 - 997
12345