MEMORY-CELL ARRAY WITH NORMALLY OFF-TYPE SCHOTTKY-BARRIER FETS

被引：14
作者：
DRANGEID, KE
MOSER, A
MOHR, TO
BROOM, RF
JUTZI, W
SASSO, G
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1972年 / SC 7卷 / 04期
关键词：
D O I：
10.1109/JSSC.1972.1050298
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：277 / &
相关论文
共 13 条
[1]   HIGH-SPEED GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].
DRANGEID, KE ;
SOMMERHALDER, R ;
WALTER, W .
ELECTRONICS LETTERS, 1970, 6 (08) :228-+
[2]   MICROWAVE SILICON SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR [J].
DRANGEID, KE ;
JAGGI, R ;
MIDDLEHO.S ;
MOHR, T ;
MOSER, A ;
SASSO, G ;
SOMMERHALDER, R ;
WOLF, P .
ELECTRONICS LETTERS, 1968, 4 (17) :362-+
[3]  
DRANGEID KE, 1968, OCT IEEE INT EL DEV
[4]  
DRANGEID KE, 1970, IBM J RES DEVELOP, V14, P83
[5]  
KAWAMURA N, 1970, OCT IEEE INT EL DEV
[6]  
KOHN G, 1960, AEU, V14, P193
[7]   PROJECTION MASKING, THIN PHOTORESIST LAYERS AND INTERFERENCE EFFECTS [J].
MIDDELHOEK, S .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :117-+
[8]   METALLIZATION PROCESSES IN FABRICATION OF SCHOTTKY-BARRIER FETS [J].
MIDDELHOEK, S .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :148-+
[9]  
Schmidt J.D., 1965, SOLIDSTATE DESIGN, V6, P21
[10]  
SCHUETZE HJ, 1966, SEMICOND PROD SOLID, V9, P31
12