SEM OBSERVATION OF DOPANT STRIAE IN SILICON

被引：27
作者：
KOCK, AJRD
FERRIS, SD
KIMERLING, LC
LEAMY, HJ
机构：
[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 01期
关键词：
D O I：
10.1063/1.323377
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：301 / 307
页数：7
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