THEORETICAL-STUDY OF MULTIQUANTUM WELL AVALANCHE PHOTODIODES MADE FROM THE GAINAS ALINAS MATERIAL SYSTEM

被引：44
作者：
BRENNAN, K [1 ]
机构：
[1] GEORGIA INST TECHNOL, MICROELECTR RES CTR, ATLANTA, GA 30332 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 10期
关键词：
D O I：
10.1109/T-ED.1986.22700
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1502 / 1510
页数：9
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