LATERAL EPITAXIAL-GROWTH IN POLY-SI FILM OVER SIO2 FROM SINGLE-SI SEED BY SCANNING CW AR LASER ANNEALING

被引：21
作者：
SAKURAI, J
KAWAMURA, S
MORI, H
NAKANO, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 03期
关键词：
D O I：
10.1143/JJAP.20.L176
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L176 / L178
页数：3
相关论文
共 6 条
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[5]   SI BRIDGING EPITAXY FROM SI WINDOWS ONTO SIO2 BY Q-SWITCHED RUBY-LASER PULSE ANNEALING [J].
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[6]   SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2 [J].
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