PHOTOLUMINESCENCE FROM ALXGA1-XAS/GAAS QUANTUM-WELLS QUENCHED BY INTENSE FAR-INFRARED RADIATION

被引：19
作者：
QUINLAN, SM
NIKROO, A
SHERWIN, MS
SUNDARAM, M
GOSSARD, AC
机构：
[1] UNIV CALIF SANTA BARBARA,CTR FREE ELECTR LASER STUDIES,SANTA BARBARA,CA 93106
[2] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
来源：
PHYSICAL REVIEW B | 1992年 / 45卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.45.9428
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present an experimental study of the effects of intense far-infrared (FIR) radiation on the excitonic photoluminescence (PL) from AlxGa1-xAs/GaAs quantum wells. The FIR electric field was polarized parallel to the plane of undoped, 100-angstrom-wide Al0.3Ga0.7As/GaAs wells. Electron-hole pairs, created by relatively weak visible pulses, were excited by FIR pulses with intensities of up to 70 kW/cm2 at frequencies of 29.5 and 43.3 cm-1 (3.7 and 5.4 meV). Both quenching and broadening of free-exciton PL peaks were observed for rms FIR field strengths above a threshold of order 100 V/cm.
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收藏
页码：9428 / 9431
页数：4
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