IDEAL (111), (110) AND (100) SURFACES OF SI, GE AND GAAS - COMPARISON OF THEIR ELECTRONIC-STRUCTURE

被引：85
作者：
IVANOV, I
MAZUR, A
POLLMANN, J
机构：
来源：
SURFACE SCIENCE | 1980年 / 92卷 / 2-3期
关键词：
D O I：
10.1016/0039-6028(80)90209-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
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页码：365 / 384
页数：20
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