GAAS GROWTH USING TERTIARYBUTYLARSINE AND TRIMETHYLGALLIUM

被引：50

作者：

LARSEN, CA ^{[1
]}

BUCHAN, NI ^{[1
]}

LI, SH ^{[1
]}

STRINGFELLOW, GB ^{[1
]}

机构：

[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

This work was supportedb y a grant from the US Air Force; C ontracNt o. AFOSR-87-0233T. he authorsw ish to thank AmericanC yanamidC om-pany for supplyingth e tertiarybutylarsine;

D O I：

10.1016/0022-0248(88)90499-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：15 / 19

页数：5

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